EFFECT OF Mo DOPING ON THE PHOTOVOLTAIC PROPERTIES OF Mo DOPED Cd1-xZnxS (x= 3 %) QUANTUM DOTS SYNTHESIZED BY SILAR

Abstract

Cd1-xZnxS (x=3 %) and Mo-doped Cd1-xZnxS (x=3 %) quantum dots (QDs) with different Mo concentrations were synthesized at room temperature using successive ionic layer adsorption and reaction (SILAR) method. The aim of the study is to determine the optimum Mo concentration in Mo-doped CdZnS QDs using the incident photon to electron conversion efficiency (IPCE) measurements. To be obtained IPCE% values of samples, Cd1-xZnxS (x=3 %) and Mo-doped Cd1-xZnxS (x=3 %) QDs with different Mo concentrations were grown on TiO2 coated onto FTO conductive glass substrates. As a last part of the study, the structural, elemental and optical properties of Mo-doped Cd1-xZnxS (x=3 %) QDs containing optimum Mo content were investigated, respectively. Consequently, it appears that Mo-doped Cd1-xZnxS (x=3 %) QDs have a higher efficiency than Cd1-xZnxS (x=3 %) QDs and that Mo content plays an important role in this improvement.