Effect of the binuclear Cu(II) complex interface layer on the calculation of electronic properties of Au/Cu(II) complex/n-Si organic-inorganic hybrid heterojunction

Abstract

Electronic properties of organic-inorganic (01) hybrid heterojunction fabricated by forming a thin macrocyclic diamagnetic and binuclear Cu(II) complex [Cu-2(L)(ClO4)(2)][ClO4](2) (where L is C33H32N2O4) film on n-Si wafer have been studied. The Au/Cu(II) complex/n-Si contact has a rectifying behavior with the barrier height of 0.96 eV and the ideality factor of 2.96 determined from forward-bias current-voltage (I-V) characteristics at room temperature. The energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu(II) complex/n-Si interface obtained from I-V characteristics ranges from 1.62 x 10(13) cm(-1) eV(-1) at (E-c - 0.66)eV to 6.82 x 10(12) cm(-2) eV(-1) at (E-c - 0.9)eV. (C) 2008 Elsevier B.V. All rights reserved.