Synthesis, characterization and photovoltaic properties of Cd1-xZnxS and Mn: Cd1-xZnxS quantum dots

Abstract

In our present study, firstly, Cd1-xZnxS (x = 0.25, 0.5, 1, 3 and 5%) quantum dots were synthesized at room temperature by the chemical precipitation technique. 1-thioglycerol was used as a capping agent to avoid any agglomeration. The incident photons to current efficiency measurements were carried out to determine Zn concentration in the Cd1-xZnxS quantum dots. Cd1-xZnxS (x = 3%) quantum dots showed the highest efficiency of quantum dot sensitized solar cells compare to other Zn concentrations. Secondly, after the determination of the optimum Zn content in the Cd1-xZnxS quantum dots, Mn (0.25, 0.5, 1, 3 and 5%): Cd1-xZnxS (x = 3%) quantum dots were synthesized at room temperature by same technique, then the incident photons to current efficiency measurements were performed to determine the optimum Mn concentration in the Mn (0.25, 0.5, 1, 3 and 5%): Cd1-xZnxS (x = 3%) quantum dots. It was found that Mn (3%): Cd1-xZnxS (x = 3%) quantum dots have the highest incident photons to current efficiency value compare to other Mn concentrations. Finally, structural, elemental and optical properties of Cd1-xZnxS (x = 3%) and Mn (3%): Cd1-xZnxS (x = 3%) quantum dots-have the highest incident photons to current efficiency value in their category-have been investigated. The effect of Mn on the photovoltaic properties of Mn (0.25, 0.5, 1, 3 and 5%): Cd1-xZnxS (x = 3%) quantum dots have been reported for the first time in this study and our study suggests that Mn (3%): Cd1-xZnxS (x = 3%) quantum dots can be used unique materials to enhance performance of quantum dot sensitized solar cells.