Experimental frequency analysis of p and n-type semiconductor barriers in SBD system

Abstract

An experimental study was conducted to analyze the behavior of semiconductor materials in a variable strong electrical field medium, the effect of semiconductor barriers on the formation and development of the discharge, the barrier effect of semiconductor materials and the frequency response of Semiconductor Barrier Discharge (SBD) system. Applications were carried out in vacuum, air and nitrogen medium separately with randomly selected frequency values. It was seen from the first stage results that the barrier effect of the semiconductor layers on the current oscillations is quite striking in the vacuum medium. As the frequency of the applied voltage increases, the barrier effect of the semiconductor layers was seen to reduce. Besides, as the frequency values increase, the discharge current was determined to get more linear. In the second stage, the results have shown that the SBD operated with the AC voltage characterizes the structure of a band-stop filter. The frequency of the voltage applied to the SBD system and the design of the reactor determine the frequency at which the discharge current was suppressed. Knowing these new features of SBD effects on semiconductors, give an important contribution to the design of the semiconductor production industry.