Fabrication of Pure Sb2S3 and Fe (2.5%): Sb2S3 thin films and ınvestigation their properties

Abstract

Pure Sb2S3 and Fe (2.5%): Sb2S3 thin films were synthesized on Zn2SnO4 coated with FTO conductive glasses using chemical bath deposition (CBD) technique. The X-ray diffraction (XRD) patterns obtained show that both thin films have an orthorhombic structure. Although the crystal structure of the two thin films was the same, the crystalline size of Fe (2.5%): Sb2S3 thin film (51.15 nm) was found to be smaller than that of pure Sb2S3 (52.89 nm). The effect of Fe doped metal on crystal size of Sb2S3 was observed with this result. Another important observation is that the energy band gap of Fe (2.5%): Sb2S3 thin film (2.00 eV) is larger than that of pure Sb2S3 (1.89 eV). The photovoltaic properties of the synthesized thin films were examined by applying both incident photon-to-current efficiency (IPCE) and current density (J)–voltage (V) measurements. The obtained IPCE(%) values at 600 nm for pure Sb2S3 and Fe (2.5%): Sb2S3 thin films are 30.29 and 49.06, respectively. Using the J–V curves, the calculated η (%) values for pure Sb2S3 and Fe (2.5%): Sb2S3 thin films are 3.95 and 5.44, respectively. Based on the data obtained from both measurements, it was observed that the Fe dopant significantly enhance the performance of the Sb2S3-based solar cell devices.