Synthesis of W(3%)-doped CdS thin film by SILAR and its characterization

Abstract

In this study, the structural, elemental, optical and photovoltaic properties of W(3%)-doped CdS thin film on a glass substrate at room temperature using the low-cost successive ionic layer adsorption and reaction (SILAR) technique were investigated. Based on the obtained -ray diffraction patterns, it was determined that the structure of W(3%)-doped CdS thin film is cubic compared with the standard data. The spectrum obtained from energy dispersive X-ray analysis revealed that the doping process is successfully carried out by the SILAR method. The band gap (E-g) of W(3%)-doped CdS thin film was observed with both optical absorption and photoluminescence measurements, which were higher than the pure CdS. Finally, the photovoltaic properties of W(3%)-doped CdS thin film grown on TiO2 coated on the fluorine doped tin oxide conductive glass by SILAR method at room temperature were examined by both current density-voltage and incident photon to current efficiency measurements. Consequently, it can be seen from the application point of view that W(3%)-doped CdS thin film can be used as a promising sensitizer in thin film sensitized solar cells.